Amorphous Insulating Thin Films. Partie IIDEVINE, Rod A. B; WARREN, W. L; KANICKI, Jerzy et al.Journal of non-crystalline solids. 1995, Vol 187, issn 0022-3093, 519 p.Conference Proceedings

A comparative study on structural and electronic properties of PECVD a-SiO_x with a-SiN_xMAEDA, K; SAKAMOTO, N; UMEZU, I et al.Journal of non-crystalline solids. 1995, Vol 187, pp 287-290, issn 0022-3093Conference Paper

Dielectrics in microelectronics : problems and perspectivesBALK, P.Journal of non-crystalline solids. 1995, Vol 187, pp 1-9, issn 0022-3093Conference Paper

Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide filmsCHING-FA YEH; SHYUE-SHYH LIN.Journal of non-crystalline solids. 1995, Vol 187, pp 81-85, issn 0022-3093Conference Paper

Nature of the Si and N dangling bonds in silicon nitrideROBERTSON, J; WARREN, W. L; KANICKI, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 297-300, issn 0022-3093Conference Paper

RTP : temperature monitoring by means of oxidationZÖLLNER, J.-P; CIMALLA, V; PEZOLDT, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 23-28, issn 0022-3093Conference Paper

Structural and electrical properties of thin SiO₂ layers grown by RTP in a mixture of N₂O and O₂BAUER, A. J; BURTE, E. P.Journal of non-crystalline solids. 1995, Vol 187, pp 361-364, issn 0022-3093Conference Paper

A novel ellipsometric set up for high precision thin films measurementsMONIN, J; SAHSAH, H; BREVET-PHILIBERT, O et al.Journal of non-crystalline solids. 1995, Vol 187, pp 129-133, issn 0022-3093Conference Paper

Chemical interaction in ion-implanted amorphous SiO₂ and application to formation and modification of nanosize colloid particlesHOSONO, H.Journal of non-crystalline solids. 1995, Vol 187, pp 457-472, issn 0022-3093Conference Paper

Dissociation of H₂ at silicon dangling orbitals in a-SiO₂ : a quantum mechanical treatment of nuclear motionEDWARDS, A. H.Journal of non-crystalline solids. 1995, Vol 187, pp 232-243, issn 0022-3093Conference Paper

Surface plasmon-induced luminescence : a probe to study electrical aging and dielectric breakdown in polymer-like thin filmsFOULANI, A; LAURENT, C; CANET, P et al.Journal of non-crystalline solids. 1995, Vol 187, pp 415-419, issn 0022-3093Conference Paper

Comparison of experimental and calculated TO and LO oxygen vibrational modes in thin SiO₂ filmsMARTINET, C; DEVINE, R. A. B.Journal of non-crystalline solids. 1995, Vol 187, pp 96-100, issn 0022-3093Conference Paper

Interface traps induced by hole trapping in metal-oxide semiconductor devicesROH, Y; TROMBETTA, L; DIMARIA, D. J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 165-169, issn 0022-3093Conference Paper

Low-temperature voltage enhanced UV-assisted oxidation of siliconDOLIQUE, A; READER, A. H.Journal of non-crystalline solids. 1995, Vol 187, pp 29-34, issn 0022-3093Conference Paper

Morphology of LPCVD Si₃N₄ films after high temperature treatment and HF etchingBESHKOV, G; LAZAROVA, V; DIMITROV, D. B et al.Journal of non-crystalline solids. 1995, Vol 187, pp 301-307, issn 0022-3093Conference Paper

Oxidation of amorphous and crystalline siliconSZEKERES, A; DANESH, P.Journal of non-crystalline solids. 1995, Vol 187, pp 45-48, issn 0022-3093Conference Paper

Parameters controlling the generation of natural intrinsic EX defects in thermal SiO₂ on SiSTESMANS, A; SCHEERLINCK, F.Journal of non-crystalline solids. 1995, Vol 187, pp 119-123, issn 0022-3093Conference Paper

Surface potential dependence of interface state passivation in metal-tunnel oxide-silicon diodesANDERSSON, M. O; LUNDGREN, A; LUNDGREN, P et al.Journal of non-crystalline solids. 1995, Vol 187, pp 273-277, issn 0022-3093Conference Paper

Three-level charge pumping study of radiation-induced defects at Si-SiO2[SiO₂] interface in submicrometer MOS transistorsAUTRAN, J.-L; BALLAND, B; BABOT, D et al.Journal of non-crystalline solids. 1995, Vol 187, pp 211-215, issn 0022-3093Conference Paper

Buried oxides : where we have been and where we are goingLERAY, J.-L.Journal of non-crystalline solids. 1995, Vol 187, pp 10-22, issn 0022-3093Conference Paper

Influence of the oxide charge build-up during Fowler-Nordheim stress on the current-voltage characteristics of metal-oxide-semiconductor capacitorsELRHARBI, S; JOURDAIN, M.Journal of non-crystalline solids. 1995, Vol 187, pp 175-180, issn 0022-3093Conference Paper

Photo-assisted switching and trapping in BaTiO₃ and Pb(Zr,Ti)O₃ ferroelectricsWARREN, W. L; DIMOS, D.Journal of non-crystalline solids. 1995, Vol 187, pp 448-452, issn 0022-3093Conference Paper

Bias stress studies of a-SiN:H/a-Si:H MIS structures from quasistatic capacitance measurementsREYNAUD, J; KLEIDER, J. P; MENCARAGLIA, D et al.Journal of non-crystalline solids. 1995, Vol 187, pp 313-318, issn 0022-3093Conference Paper

Chemical reactions of hydrogenous species in the Si/SiO₂ systemPOINDEXTER, E. H.Journal of non-crystalline solids. 1995, Vol 187, pp 257-263, issn 0022-3093Conference Paper

Electrical properties of hydrogen-rich Si/SiO₂ structuresDANESH, P; SZEKERES, A.Journal of non-crystalline solids. 1995, Vol 187, pp 270-272, issn 0022-3093Conference Paper